Electrodeposited CuInSe2 thin film devices

被引：1

作者：

Raffaelle, RP ^{[1
]}

Mantovani, JG ^{[1
]}

Friedfeld, RB ^{[1
]}

Bailey, SG ^{[1
]}

Hubbard, SM ^{[1
]}

机构：

[1] Florida Inst Technol, Dept Phys & Space Sci, Melbourne, FL 32901 USA

来源：

CONFERENCE RECORD OF THE TWENTY SIXTH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE - 1997 | 1997年

关键词：

D O I：

10.1109/PVSC.1997.654152

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We have been investigating the electrochemical deposition of thin films and junctions based on copper indium diselenide(CIS). CIS is considered to be one of the best absorber materials for use in polycrystalline thin film photovoltaic solar cells. Electrodeposition is a simple and inexpensive method for producing thin-film CIS. We have produced both p and n type CIS thin films, as well as a CIS pn junction electrodeposited from a single aqueous solution. Optical bandgaps were determined for these thin films using transmission spectroscopy. Current versus voltage characteristics were measured for Schottky barriers on the individual films and for the pn junction.

引用

页码：559 / 562

页数：4