Design and simulation of a novel 1400V-4000V enhancement mode buried gate GaN HEMT for power applications

被引：9

作者：

Faramehr, Soroush ^{[1
]}

Kalna, Karol ^{[1
]}

Igic, Petar ^{[1
]}

机构：

[1] Swansea Univ, Coll Engn, Elect Syst Design Ctr, Swansea, W Glam, Wales

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2014年 / 29卷 / 11期

关键词：

gallium nitride; high electron mobility transistor; power switch; enhancement mode; breakdown; simulation; ELECTRON-MOBILITY TRANSISTORS; BREAKDOWN VOLTAGE; ALGAN/GAN HEMTS; SILICON; BUFFER; IONIZATION;

D O I：

10.1088/0268-1242/29/11/115020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel enhancement mode structure, a buried gate gallium nitride (GaN) high electron mobility transistor (HEMT) with a breakdown voltage (BV) of 1400 V-4000 V for a source-to-drain spacing (L-SD) of 6 mu m-32 mu m, is investigated using simulations by Silvaco Atlas. The simulations are based on meticulous calibration of a conventional lateral 1 i.tm gate length GaN HEMT with a source-to-drain spacing of 6 mu m against its experimental transfer characteristics and BV. The specific on-resistance R-S for the new power transistor with the source-to-drain spacing of 6 mu m showing BV = 1400 V and the source-to-drain spacing of 8 mu m showing BV = 1800 V is found to be 2.3 m Omega.cm(2) and 3.5 m Omega.cm(2), respectively. Further improvement up to BV = 4000 V can be achieved by increasing the source-to-drain spacing to 32 mu m with the specific on-resistance of R-S = 35.5 m Omega.cm(2). The leakage current in the proposed devices stays in the range of similar to 5 x 10(-9) mA mm(-1).

引用

页数：7