Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer

被引：12

作者：

Zhou, Quanbin ^{[1
]}

Wang, Hong ^{[1
,2
]}

Xu, Mingsheng ^{[1
,2
]}

Zhang, Xi-Chun ^{[1
]}

机构：

[1] South China Univ Technol, Engn Res Ctr Optoelect Guangdong Prov, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China

[2] South China Univ Technol, Sch Phys & Optoelect, Guangzhou 510640, Guangdong, Peoples R China

来源：

NANOMATERIALS | 2018年 / 8卷 / 07期

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

p-type InGaN; graded indium composition; hole injection; quantum efficiency; green LED; GROWTH TEMPERATURE; BLUE; POLARIZATION;

D O I：

10.3390/nano8070512

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We propose a graded indium composition p-type InGaN (p-InGaN) conduction layer to replace the p-type AlGaN electron blocking layer and a p-GaN layer in order to enhance the light output power of a GaN-based green light-emitting diode (LED). The indium composition of the p-InGaN layer decreased from 10.4% to 0% along the growth direction. The light intensity of the LED with a graded indium composition p-InGaN layer is 13.7% higher than that of conventional LEDs according to the experimental result. The calculated data further confirmed that the graded indium composition p-InGaN layer can effectively improve the light power of green LEDs. According to the simulation, the increase in light output power of green LEDs with a graded indium composition p-InGaN layer was mainly attributed to the enhancement of hole injection and the improvement of the radiative recombination rate.

引用

页数：8

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