Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer

被引：12

作者：

Zhou, Quanbin ^{[1
]}

Wang, Hong ^{[1
,2
]}

Xu, Mingsheng ^{[1
,2
]}

Zhang, Xi-Chun ^{[1
]}

机构：

[1] South China Univ Technol, Engn Res Ctr Optoelect Guangdong Prov, Sch Elect & Informat Engn, Guangzhou 510640, Guangdong, Peoples R China

[2] South China Univ Technol, Sch Phys & Optoelect, Guangzhou 510640, Guangdong, Peoples R China

来源：

NANOMATERIALS | 2018年 / 8卷 / 07期

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

p-type InGaN; graded indium composition; hole injection; quantum efficiency; green LED; GROWTH TEMPERATURE; BLUE; POLARIZATION;

D O I：

10.3390/nano8070512

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We propose a graded indium composition p-type InGaN (p-InGaN) conduction layer to replace the p-type AlGaN electron blocking layer and a p-GaN layer in order to enhance the light output power of a GaN-based green light-emitting diode (LED). The indium composition of the p-InGaN layer decreased from 10.4% to 0% along the growth direction. The light intensity of the LED with a graded indium composition p-InGaN layer is 13.7% higher than that of conventional LEDs according to the experimental result. The calculated data further confirmed that the graded indium composition p-InGaN layer can effectively improve the light power of green LEDs. According to the simulation, the increase in light output power of green LEDs with a graded indium composition p-InGaN layer was mainly attributed to the enhancement of hole injection and the improvement of the radiative recombination rate.

引用

页数：8

共 43 条

[1] Progress of LED backlights for LCDs [J].

Anandan, Munisamy .

JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2008, 16 (02) :287-310

[2]

[Anonymous], 2010, APS VERS 2010 SOFTW

[3]

Chen F.-M., 2013, NUMERICAL ANAL USING

[4] Study of photoluminescence and absorption in phase- separation InGaN films [J].

Chen, ZZ ;

Qin, ZX ;

Hu, XD ;

Yu, TJ ;

Yang, ZJ ;

Tong, YZ ;

Ding, XM ;

Zhang, GY .

PHYSICA B-CONDENSED MATTER, 2004, 344 (1-4) :292-296

[5]

Cheng L., 2016, OPTICAL QUANTUM ELEC, V48, P1

[6] Tuning carrier lifetime in InGaN/GaN LEDs via strain compensation for high-speed visible light communication [J].

Du, Chunhua ;

Huang, Xin ;

Jiang, Chunyan ;

Pu, Xiong ;

Zhao, Zhenfu ;

Jing, Liang ;

Hu, Weiguo ;

Wang, Zhong Lin .

SCIENTIFIC REPORTS, 2016, 6

[7] High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications [J].

Ferreira, Ricardo X. G. ;

Xie, Enyuan ;

McKendry, Jonathan J. D. ;

Rajbhandari, Sujan ;

Chun, Hyunchae ;

Faulkner, Grahame ;

Watson, Scott ;

Kelly, Anthony E. ;

Gu, Erdan ;

Penty, Richard V. ;

White, Ian H. ;

O'Brien, Dominic C. ;

Dawson, Martin D. .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2016, 28 (19) :2023-2026

[8] A study of indium incorporation in In-rich InGaN grown by MOVPE [J].

Guo, Y. ;

Liu, X. L. ;

Song, H. P. ;

Yang, A. L. ;

Xu, X. Q. ;

Zheng, G. L. ;

Wei, H. Y. ;

Yang, S. Y. ;

Zhu, Q. S. ;

Wang, Z. G. .

APPLIED SURFACE SCIENCE, 2010, 256 (10) :3352-3356

[9] Effects of p-GaN growth temperature on a green InGaN/GaN multiple quantum well [J].

Ju, Jin-Woo ;

Zhu, Junjie ;

Kim, Hwa-Soo ;

Lee, Cheul-Ro ;

Lee, In-Hwan .

JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2007, 50 (03) :810-813

[10] Enhancing the performance of green GaN-based light-emitting diodes with graded superlattice AlGaN/GaN inserting layer [J].

Kang, Junjie ;

Li, Hongjian ;

Li, Zhi ;

Liu, Zhiqiang ;

Ma, Ping ;

Yi, Xiaoyan ;

Wang, Guohong .

APPLIED PHYSICS LETTERS, 2013, 103 (10)

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