New theory of the thermal oxidation of silicon

被引：1

作者：

Gadiyak, GV ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Computat Technol, Siberian Branch, Novosibirsk 630090, Russia

来源：

1997 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS | 1997年

关键词：

D O I：

10.1109/HKEDM.1997.642334

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The growth kinetics of SiO2 films on silicon is developed. A simple model of oxidation takes into account the reactions occurring in bulk and at the two interfaces of the oxide layer as well as the diffusion process for atomic oxygen and diffusion approximation for calculation of the coefficients of kinetic reactions. The relationship is shown to be in execelent agreement with oxidation data obtained over a range of temperature (800 degrees - 1200 degrees C), and oxide thickness (6 - 400 Angstrom) for O-2 and N2O ambient oxidation.

引用

页码：69 / 73

页数：5