The effect of the H2/(H2 + Ar) flow-rate ratio on hydrogenated amorphous carbon films grown using Ar/H2/C7H8 plasma chemical vapor deposition

被引：4

作者：

Fang, Taojun ^{[1
]}

Yamaki, Kenji ^{[1
]}

Koga, Kazunori ^{[1
]}

Yamashita, Daisuke ^{[1
]}

Seo, Hyunwoong ^{[1
]}

Itagaki, Naho ^{[1
]}

Shiratani, Masaharu ^{[1
]}

Takenaka, Kosuke ^{[2
]}

Setsuhara, Yuichi ^{[2
]}

机构：

[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Fukuoka, Fukuoka 8190395, Japan

[2] Osaka Univ, Joining & Welding Res Inst, Osaka 5670047, Japan

来源：

THIN SOLID FILMS | 2018年 / 660卷

关键词：

Amorphous hydrogenated carbon; Thin films; Plasma-enhanced chemical vapor deposition; Toluene; Surface roughness; Hydrogen content; DIAMOND-LIKE CARBON; CHEMICAL-VAPOR-DEPOSITION; A-C-H; IONIZATION CROSS-SECTIONS; SUBSTRATE-TEMPERATURE; THIN-FILMS; DLC FILMS; DENSITY; CVD; TRANSITIONS;

D O I：

10.1016/j.tsf.2018.02.035

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

To produce hydrogenated amorphous carbon (a-C:H) films with high mass density at a high deposition rate and low substrate bias voltage, we deposited these films on a Si substrate by plasma chemical vapor deposition, using toluene as a source compound and varying the gas flow-rate ratio of H-2/(H-2+ Ar). By decreasing the gas flow-rate ratio from 55% to 11%, the hydrogen content in the films decreased, and the density of sp(3) carbon atoms in the films increased, whereas their surface roughness increased. At the gas flow-rate ratio of 11%, we produced a-C:H films with a high bulk density of 1830 kg/m(3) at a high deposition rate of 81.1 nm/min.

引用

页码：891 / 898

页数：8

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