Thickness dependence of planar Hall resistance and field sensitivity in NiO(3Onm)/NiFe(t) bilayers

被引：9

作者：

Kim, DY

Kim, CG ^{[1
]}

Park, BS

Park, CM

机构：

[1] Sun Moon Univ, Dept Phys, Chungnam 336840, South Korea

[2] Hyundai Elect Ind Co Ltd, Telecommun Syst Lab 2, Kyonggi 476860, South Korea

[3] Sangji Univ, Dept Phys, Wonju 220702, South Korea

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2000年 / 215卷

基金：

新加坡国家研究基金会;

关键词：

AMR; PHR; field sensitivity; exchange-coupling field; anisotropy constant;

D O I：

10.1016/S0304-8853(00)00229-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We measured the planar Nail resistance (PHR) profiles in NiO (30 nm)/NiFe (t) bilayers for t = 5, 10, 20 and 30 nm and analyzed its field sensitivity in terms of exchange-coupling field and anisotropy constant. The measured PHR shows linear field dependence at near H = 0 as well as small hysteresis. The linear field range Delta H and resistance change, Delta R = R-parallel to - R-perpendicular to decrease with the NiFe thickness, where Delta H is calculated to be proportional to the anisotropy constant K-u and exchange-coupling field H-ex. However, the field sensitivity Delta R/Delta H shows a maximum value at t = 20 nm; where K-u is the minimum. The PHR has the advantage of a linear response at the operating field range and can be used for a recording read-out head and related applications. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：585 / 588

页数：4