Structural transformation of single crystal silicon under uniaxial stress

被引：0

作者：

Jeong, Seong-Min ^{[1
]}

Kitamura, Takayuki ^{[1
]}

机构：

[1] Kyoto Univ, Dept Mech Engn & Sci, Sakyo Ku, Kyoto 6068501, Japan

来源：

MECHANICAL BEHAVIOR OF MATERIALS X, PTS 1AND 2 | 2007年 / 345-346卷

基金：

日本学术振兴会;

关键词：

silicon; phase transformation; atomistic simulation; tersoff potential; stress;

D O I：

10.4028/www.scientific.net/KEM.345-346.963

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The diamond structure of single crystal silicon transforms to other structures under mechanical stress, We investigate the structural transformation of diamond cubic structure to betatin structure in silicon under uniaxial stress using atomistic simulation on the basis of the Tersoff potential. As a result, under extensive compressive strain, the structural transformation from Si-I to Si-II is found.

引用

页码：963 / +

页数：2

共 9 条

[1] Molecular dynamics simulation of phase transformations in silicon monocrystals due to nano-indentation [J].

Cheong, WCD ;

Zhang, LC .

NANOTECHNOLOGY, 2000, 11 (03) :173-180

[2] CRYSTAL DATA FOR HIGH-PRESSURE PHASES OF SILICON [J].

HU, JZ ;

MERKLE, LD ;

MENONI, CS ;

SPAIN, IL .

PHYSICAL REVIEW B, 1986, 34 (07) :4679-4684

[3] CRYSTAL STRUCTURES AT HIGH PRESSURES OF METALLIC MODIFICATIONS OF SILICON AND GERMANIUM [J].

JAMIESON, JC .

SCIENCE, 1963, 139 (355) :762-&

[4] CRYSTAL STRUCTURES AT HIGH PRESSURES OF METALLIC MODIFICATIONS OF COMPOUNDS OF INDIUM, GALLIUM, AND ALUMINUM [J].

JAMIESON, JC .

SCIENCE, 1963, 139 (355) :845-&

[5] Phase transformations of silicon caused by contact loading [J].

Kailer, A ;

Gogotsi, YG ;

Nickel, KG .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (07) :3057-3063

[6] IDEAL CRYSTAL STABILITY AND PRESSURE-INDUCED PHASE-TRANSITION IN SILICON [J].

MIZUSHIMA, K ;

YIP, S ;

KAXIRAS, E .

PHYSICAL REVIEW B, 1994, 50 (20) :14952-14959

[7] Atomistic simulations of structural transformations of silicon surfaces under nanoindentation [J].

Sanz-Navarro, CF ;

Kenny, SD ;

Smith, R .

NANOTECHNOLOGY, 2004, 15 (05) :692-697

[8] NEW EMPIRICAL-APPROACH FOR THE STRUCTURE AND ENERGY OF COVALENT SYSTEMS [J].

TERSOFF, J .

PHYSICAL REVIEW B, 1988, 37 (12) :6991-7000

[9] Microstructures of phases in indented silicon: A high resolution characterization [J].

Zarudi, I ;

Zou, J ;

Zhang, LC .

APPLIED PHYSICS LETTERS, 2003, 82 (06) :874-876

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