Surface Modification and Activation with Gas Cluster Ion Beam

被引：0

作者：

Sasaki, Tomoya ^{[1
]}

Toyoda, Noriaki ^{[1
]}

Yamada, Isao ^{[1
]}

机构：

[1] Univ Hyogo, Grad Sch Engn, 2167 Shosha, Himeji, Hyogo, Japan

来源：

2016 21ST INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT) | 2016年

关键词：

wafer bonding; GCIB; SAB; Cu;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Gas cluster ion beam (GCIB) was used for surface activation bonding (SAB). Since GCIB modifies only near surface, low-damage surface modification and activation are expected. In this study, Cu-Cu bonding with GCIB irradiation was selected as a preliminary study. XPS and contact angle measurement showed that surface oxide on Cu was removed efficiently by oblique incidence Ar-GCIB at 20 kV. Also, sequential irradiation of GCIB at normal and oblique incidence realized smooth Cu surface. Cu-Cu bonding did not succeced without GCIB irradiation or with 5 kV Ar-GCIB irradiation. On the country, Cu-Cu bondings were realized with 10 or 20 kVAr-GCIB irradiations owing to surface oxide removal.

引用

页数：3

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