Deposition of BCN films by laser ablation

被引:0
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作者
Popov, C
Ivanov, B
Masseli, K
Shanov, V
机构
[1] Bulgarian Acad Sci, Cent Lab Photoproc Acad Jordan Malinowski, BU-1113 Sofia, Bulgaria
[2] Univ Chem Technol & Met, Dept Semicond, BU-1756 Sofia, Bulgaria
[3] Univ Gesamthsch Kassel, Inst Tech Phys, D-34109 Kassel, Germany
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中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Thin BCN films were deposited on monocrystalline silicon substrates by laser ablation at 510 nm using CuBr vapor laser. The target materials were synthesized from melamine and BCl3 at 600 and 950 degrees C, and the disks for laser irradiation were prepared by pressing the powders without binder. The focused laser beam scanned the targets with a speed of 4 mu m/s. The element analysis by Auger electron spectroscopy (AES) showed that the layers were composed of B, C, and N with peaks at 177, 266, and 373 eV, respectively. A decrease of nitrogen content in the films compared to both starting materials was observed and the ratios of the main elements in the deposits were B : C : N = 3 : 9 : 2 and 6 : 2 : 1. Pulsed CuBr vapor laser irradiation probably caused partial destruction of the target material, accompanied by release of nitrogen-containing gas species. The formation of such species (N-2, NH3, (CN)(2)) was observed by quadrupole mass spectrometry during the deposition process. Fourier-transform infrared spectroscopy (FTIR) was used to derive structural information. The absorption bands at 1557, 1539, 1457, and 1436 cm(-1) in IR spectrum of the films deposited from starting material synthesized at 600 degrees C were attributed to the stretching vibration of the s-triazine ring. Therefore IR spectrum indicated that in the obtained layer the six-member (C3N3) rings remained undecomposed. The additional bands in the spectrum originated from the bridges between s-triazine rings, composing the layer. The IR spectrum of the films deposited from starting material synthesized at 950 degrees C showed quite different pattern. The s-triazine rings were entirely decomposed above 620 degrees C and the deposit was mixture of boron nitride and carbide (bands at 1404 and 1108 cm(-1)). X-ray photoelectron spectroscopy (XPS) indicated that the atoms of all elements composing the films were in a wide variety of atomic arrangements and N-C, N-B and B-C bonds were established in the deposits. Electron diffraction (ED) showed that the films deposited from the starting material synthesized at 600 degrees C had a layered graphite-like structure.
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页码:280 / 284
页数:5
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