Growth and characterization of InAs epitaxial layer on GaAs(111)B -: art. no. 205307

被引：26

作者：

Wen, H ^{[1
]}

Wang, ZM ^{[1
]}

Shultz, JL ^{[1
]}

Liang, BL ^{[1
]}

Salamo, GJ ^{[1
]}

机构：

[1] Univ Arkansas, Dept Phys, Fayetteville, AR 72701 USA

来源：

PHYSICAL REVIEW B | 2004年 / 70卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.70.205307

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The behavior of InAs deposition on GaAs(111)B substrates and the corresponding routes toward strain relaxation have been investigated. InAs growth was for depositions ranging from 2 monolayers to 30 monolayers. Over this deposition range, different routes for strain relaxation caused by the lattice mismatch were observed. The strain relaxed through ragged step edge formation and Ga-In intermixing for low InAs deposition and through the formation of step bunching and dislocations for thicker depositions.

引用

页码：205307 / 1

页数：4

共 27 条

[21] Atomic force microscopy correlated with spectroscopic ellipsometry during homepitaxial growth on GaAs(111)B substrates [J].