A 30-GHz Triple-Push Oscillator on Silicon for mm-wave Applications

被引：3
作者：
Catli, Burak [1 ]
Hella, Mona M. [1 ]
机构：
[1] Rensselaer Polytech Inst, ECSE Dept, Troy, NY 12180 USA
来源：
ISCAS: 2009 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-5 | 2009年
关键词：
VCO;
D O I：
10.1109/ISCAS.2009.5118193
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
Methodologies for a manufacturable design, and layout optimization of voltage controlled oscillators in triple push architectures for mm-wave applications, are proposed. The techniques are applied in the design of a fully-monolithic 30GHz triple push oscillator in 130nm CMOS technology. The oscillator provides an output power up to OdBm with a maximum fundamental harmonic suppression of -18.66dBc and second harmonic suppression better than -30dBc. To the authors' knowledge, this is the first triple push oscillator on silicon and the highest levels of harmonic rejections reported for integrated triple-push oscillators.
引用
收藏
页码：2037 / 2040
页数：4
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