High aspect ratio grating fabrication by imprint lithography

被引:8
作者
Hirai, Y [1 ]
Konishi, T [1 ]
Kanakugi, T [1 ]
Kawata, H [1 ]
Kikuta, H [1 ]
机构
[1] Osaka Prefecture Univ, Dept Phys & Elect Engn, Grad Sch, Sakai, Osaka 5998531, Japan
来源
NANOENGINEERING: FABRICATION, PROPERTIES, OPTICS, AND DEVICES | 2004年 / 5515卷
关键词
optical element; grating; imprint lithography; aspect ratio; quarter wave plate; optical switch;
D O I
10.1117/12.560249
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
A fine grating with high aspect rate pattern is one of the essential elements for advanced nano optical devices such as a quarter wave plate. To fabricate high aspect ratio pattern having sub wavelength feature size, nanoimprint lithography is applied. However, fatal defects caused by mechanical stress and friction between the mold and polymer are significant problems. To eliminate the defects, the process sequence, pressure and temperature conditions are optimized. Using Si based mold, sub wavelength grating having 200nm in width and over 1.7 micron in height is demonstrated using PMMA thin film on quartz substrate. This method is a promising technology for industrial production of advanced nano optical elements having high aspect ratio structure.
引用
收藏
页码:187 / 194
页数:8
相关论文
共 7 条
[1]  
AUSTIN MD, 2004, 2 INT C NAN NAN TECH, pD5
[2]   Nanoimprint lithography [J].
Chou, SY ;
Krauss, PR ;
Renstrom, PJ .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (06) :4129-4133
[3]  
Herzing H., 1997, MICROOPTICS
[4]   Defect analysis in thermal nanoimprint lithography [J].
Hirai, Y ;
Yoshida, S ;
Takagi, N .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (06) :2765-2770
[5]   High aspect pattern fabrication by nano imprint lithography using fine diamond mold [J].
Hirai, Y ;
Yoshida, S ;
Takagi, N ;
Tanaka, Y ;
Yabe, H ;
Sasaki, K ;
Sumitani, H ;
Yamamoto, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2003, 42 (6B) :3863-3866
[6]  
Hirai Y., 2001, Journal of Photopolymer Science and Technology, V14, P457, DOI 10.2494/photopolymer.14.457
[7]  
MIYAUCHI A, 2004, 2 INT C NAN NAN TECH, P14