Determining the Poisson's ratio of thin film materials using resonant method

被引:35
作者
Tsai, HC [1 ]
Fang, WL [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Power Mech Engn, Hsinchu, Taiwan
关键词
Poisson's ratio; thin film materials; bending and torsional vibration modes; cantilever beams; (111) substrate;
D O I
10.1016/S0924-4247(02)00400-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, a resonant technique to characterize the Poisson's ratio of thin film materials is proposed. The diagnostic micromachined cantilevers are fabricated using the thin film to be determined. The Poisson's ratio of the thin film can be determined after the bending and torsional vibration modes are measured. To obtain cantilevers with prismatic cross section, the micromachined beams were fabricated on the (1 1 1) silicon substrate. The primary advantage of this technique is that the error of Poisson's ratio due to the deviation of film thickness can be significantly reduced. In application of this technique, the Poisson's ratio of thermally grown silicon dioxide is measured to be 0.202 +/- 0.021. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:377 / 383
页数:7
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