Quasiballistic magnetization reversal

被引：136
作者：
Schumacher, HW
Chappert, C
Sousa, RC
Freitas, PP
Miltat, J
机构：
[1] Univ Paris 11, CNRS, Inst Elect Fondamentale, UMR 8622, F-91405 Orsay, France
[2] Inst Engn Sistemas & Computadores, P-1000 Lisbon, Portugal
[3] Univ Paris 11, CNRS, UMR 8502, Phys Solides Lab, F-91405 Orsay, France
来源：
PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 01期
关键词：
D O I：
10.1103/PhysRevLett.90.017204
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We demonstrate a quasiballistic switching of the magnetization in a microscopic magnetoresistive memory cell. By means of time resolved magnetotransport, we follow the large angle precession of the free layer magnetization of a spin valve cell upon application of transverse magnetic field pulses. Stopping the field pulse after a 180degrees precession rotation leads to magnetization reversal with reversal times as short as 165 ps. This switching mode represents the fundamental ultrafast limit of field induced magnetization reversal.
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页数：4
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