Luminescence of doped nanoparticles of wide band gap II-VI compounds

被引：6

作者：

Godlewski, M. ^{[1
,2
]}

Yatsunenko, S. ^{[1
]}

Zalewska, M. ^{[3
]}

Klonkowski, A. ^{[3
]}

Strachowski, T. ^{[4
]}

Lojkowski, W. ^{[4
]}

机构：

[1] Polish Acad Sci, Inst Phys, Al Lotnikow 32-46, PL-02668 Warsaw, Poland

[2] Cardinal Stefan Wyszynski Univ, Nat Sci Coll Sci, Dept Math, PL-01815 Warsaw, Poland

[3] Univ Gdansk, Fac Chem, PL-80952 Gdansk, Poland

[4] Unipress, PAS, Inst High Pressure Phys, PL-01142 Warsaw, Poland

来源：

DOPED NANOPOWDERS: SYNTHESIS, CHARACTERISATION APPLICATIONS | 2007年 / 128卷

关键词：

nanoparticles; II-VI semiconductors; wide band gap oxides; transition metal ions; rare earth ions; luminescence; doping;

D O I：

10.4028/www.scientific.net/SSP.128.123

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Nanoparticles of wide band gap II-VI compounds doped with transition metal (TM) or rare earth (RE) ions are perspective phosphor materials and fluorescence labels for optoelectronic, biology and medical applications. The efficiency of 3d-3d and 4f-4f intra-shell transitions is shown to be enhanced in TM, RE doped nanoparticles. Two mechanisms of emission enhancement related to spin dependent interactions of free carriers with impurities are discussed. These interactions enhance the TM, RE intra-shell transitions by increasing the rate of host to impurity energy transfer. It is shown also that Al doping increases the intensity of light emission from ZnO nanoparticles.

引用

页码：123 / +

页数：3

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