Progress in deep-UV photoresists

被引：19

作者：

Sahoo, PB ^{[1
]}

Vyas, R ^{[1
]}

Wadhwa, M ^{[1
]}

Verma, S ^{[1
]}

机构：

[1] Semicond Complex Ltd, Mohali 160059, India

来源：

BULLETIN OF MATERIALS SCIENCE | 2002年 / 25卷 / 06期

关键词：

photoresists; DUV lithography; chemically amplified (CA) resist; top surface imaging;

D O I：

10.1007/BF02710549

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Higher resolution can be achieved in lithography by decreasing the wavelength of the exposure source. However, resist material and their processing are also important when we move to a shorter wavelength lithography technology. This paper reviews the recent development and challenges of deep-UV photoresists and their processing technology.

引用

页码：553 / 556

页数：4