Modified Gilbert-Cell Mixer With an LO Waveform Shaper and Switched Gate-Biasing for 1/f Noise Reduction in 28-nm CMOS

被引:11
作者
Ciocoveanu, Radu [1 ,2 ]
Weigel, Robert [2 ]
Hagelauer, Amelie [2 ]
Issakov, Vadim [1 ]
机构
[1] Infineon Technol AG, Power Management & Multimarket, D-85579 Neubiberg, Germany
[2] Friedrich Alexander Univ Erlangen Nurnberg, Inst Elect Engn, D-91058 Erlangen, Germany
关键词
Bias-switching; mixers; mm-wave; flicker noise; linearity;
D O I
10.1109/TCSII.2019.2923595
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this brief, we propose an active mixer based on a modified Gilbert-cell topology intended for radar applications, which uses an LO waveform shaper at mm-wave frequencies to decrease the high 1/f noise of MOS transistors. Compared to a reference mixer without an LO waveform shaper, measurement results show that this mixer achieves a significant 5 dB noise figure (NF) reduction at 100 kHz. The measured voltage conversion gain (CG) and input-referred 1-dB compression point (IP1dB) are 2 dB and -4 dBm, respectively. The core of the proposed modified Gilbert-cell draws 13 mA from a single 0.9-V supply, while it occupies an area of 0.5 mm x 0.94 mm. Additionally, an IF buffer drawing 12 mA has been added to drive a 50 Omega load for measurement purposes. To the best of author's knowledge, we apply the principle of switched biasing for 1/f noise reduction of an active mixer at mm-wave frequencies for the first time.
引用
收藏
页码:1688 / 1692
页数:5
相关论文
共 16 条
[1]  
Bloom I., 1991, 17th Convention of Electrical and Electronics Engineers in Israel. Proceedings (Cat. No.90TH0360-8), P69, DOI 10.1109/EEIS.1991.217710
[2]  
Ciocoveanu R, 2018, 2018 IEEE 18TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), P19, DOI 10.1109/SIRF.2018.8304218
[3]   Noise in RF-CMOS mixers: A simple physical model [J].
Darabi, H ;
Abidi, AA .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (01) :15-25
[4]   A noise cancellation technique in active RF-CMOS mixers [J].
Darabi, H ;
Chiu, J .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (12) :2628-2632
[5]   Comparison of 24 GHz receiver front-ends using active and passive mixers in CMOS [J].
Issakov, V. ;
Siprak, D. ;
Tiebout, M. ;
Thiede, A. ;
Simbuerger, W. ;
Maurer, L. .
IET CIRCUITS DEVICES & SYSTEMS, 2009, 3 (06) :340-349
[6]  
Issakov V., 2009, IEEE SIRF, 2009, P1
[7]  
Issakov V, 2009, 2009 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC 2009), P184
[8]   Reducing MOSFET 1/f noise and power consumption by switched biasing [J].
Klumperink, EAM ;
Gierkink, SLJ ;
van der Wel, AP ;
Nauta, B .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2000, 35 (07) :994-1001
[9]  
Kolios P, 2016, 2016 IEEE 3RD WORLD FORUM ON INTERNET OF THINGS (WF-IOT), P1, DOI 10.1109/WF-IoT.2016.7845489
[10]   Highly Linear 60-GHz SiGe Downconversion/Upconversion Mixers [J].
Mazor, N. ;
Sheinman, B. ;
Katz, O. ;
Levinger, R. ;
Bloch, E. ;
Carmon, R. ;
Ben-Yishay, R. ;
Elad, D. .
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2017, 27 (04) :401-403