Influence of Plasma-Enhanced Chemical Vapor Deposition Poly-Si Layer Thickness on the Wrap-Around and the Quantum Efficiency of Bifacial n-TOPCon (Tunnel Oxide Passivated Contact) Solar Cells

被引：13

作者：

Grubel, Benjamin ^{[1
]}

Nagel, Henning ^{[1
]}

Steinhauser, Bernd ^{[1
]}

Feldmann, Frank ^{[2
]}

Kluska, Sven ^{[1
]}

Hermle, Martin ^{[1
]}

机构：

[1] Fraunhofer Inst Solar Energy Syst ISE, Dept Adv Dev High Efficiency Silicon Solar Cells, Div Photovolta, Heidenhofstr 2, D-79110 Freiburg, Germany

[2] Solarlab Aiko Europe GmbH, Berliner Allee 29, D-79110 Freiburg, Germany

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2021年 / 218卷 / 16期

关键词：

metallization; passivated contacts; plasma-enhanced chemical vapor deposition; tunnel oxide passivated contacts;

D O I：

10.1002/pssa.202100156

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In typical industrial processing of tunnel oxide passivated contact (TOPCon) solar cells, poly-Si is deposited on the entire back of the cells. During the deposition process, a wrap-around of poly-Si onto the edges and the front side of the cells is virtually unavoidable if chemical vapor deposition processes are used. Plasma-enhanced chemical vapor deposition (PECVD) is used to investigate very thin poly-Si films and their effect on wrap-around on bifacial TOPCon solar cells fabricated without wrap-around etching. As a result, reduction of the poly-Si thickness down to 30 nm significantly increases the shunt resistance, reduces the reverse bias current, and thus reduces the risk of hot spots as measured by IR imaging and microcharacterization by secondary electron microscopy. Electroplated metallization proves to be a suitable candidate for contacting such thin TOPCon layers, being less sensitive than screen-printed metallization.

引用

页数：5