Low-leakage kV-class GaN vertical p-n diodes with non-destructive breakdown enabled by hydrogen-plasma termination with p-GaN extension

被引：8

作者：

Yang, Chen ^{[1
]}

Fu, Houqiang ^{[2
]}

Fu, Kai ^{[1
]}

Yang, Tsung-Han ^{[1
]}

Zhou, Jingan ^{[1
]}

Montes, Jossue ^{[1
]}

Zhao, Yuji ^{[1
]}

机构：

[1] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

[2] Iowa State Univ, Dept Elect & Comp Engn, Ames, IA 50011 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2021年 / 36卷 / 07期

关键词：

gallium nitride; vertical power diodes; edge termination; leakage; breakdown; power electronics; ION-IMPLANTED GAN; JUNCTION DIODES; POWER DIODES; VOLTAGE;

D O I：

10.1088/1361-6641/ac038f

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper demonstrates low-leakage hydrogen plasma (HP) terminated GaN-on-GaN vertical p-n diodes. The leakage current was decreased by similar to 800 times (at -600 V), and the breakdown voltage was nearly doubled with a p-GaN extension design. The devices showed a non-destructive breakdown voltage of 1.68 kV, a specific on-resistance (R (on)) of 0.40 M omega cm(2), and a Baliga's figure of merit of 7.1 GW cm(-2). These results indicate that HP termination with p-GaN extension is effective in reducing leakage and enhancing the breakdown capability of vertical GaN power diodes.

引用

页数：6

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