Investigation of the Optical Properties of PLD-Grown Bi2Te3 and Sb2Te3

被引:0
作者
Shaik, Muneer [1 ]
Motaleb, Ibrahim Abdel [1 ]
机构
[1] Northern Illinois Univ, Dept Elect Engn, De Kalb, IL 60115 USA
来源
2013 IEEE INTERNATIONAL CONFERENCE ON ELECTRO-INFORMATION TECHNOLOGY (EIT 2013) | 2013年
关键词
Bi2Te3; Sb2Te3; PLD; UV-Vis; FTIR; Tauc plot; THIN-FILMS; THERMOELECTRIC PROPERTIES; DEPOSITION; OXIDATION;
D O I
暂无
中图分类号
TP39 [计算机的应用];
学科分类号
081203 ; 0835 ;
摘要
The optical properties of Bismuth Telluride (Bi2Te3) and Antimony Telluride (Sb2Te3) thin films grown using pulsed laser deposition (PLD) were investigated. In one set of samples, the two materials were grown, on n-Si substrates, with growth temperatures ranging from 25 to 450 degrees C. In the second set, the films were deposited on microscopic glass slides at 150 degrees C. The optical properties were studied using Ultra Violet-Visible (UV-Vis) and Fourier Transform Infrared (FTIR) spectroscopy techniques. Absorbance spectra were obtained using UV-Vis spectroscopy, while transmittance spectra were obtained using FTIR spectroscopy. From the FTIR spectra and employing the Tauc plots, the optical band gaps for both materials were obtained. The values of the optical band gaps for Bi2Te3 are between 0.22-0.26 eV and for Sb2Te3 are between 0.19-0.28 eV.
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页数:6
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