Effect of Annealing on Defect Elimination for High Mobility Amorphous Indium-Zinc-Tin-Oxide Thin-Film Transistor

被引：86
作者：
Fuh, Chur-Shyang [1 ]
Liu, Po-Tsun [2 ,3 ]
Huang, Wei-Hsun [4 ]
Sze, Simon M. [1 ]
机构：
[1] Natl Chiao Tung Univ, Inst Elect, Dept Elect Engn, Hsinchu 30010, Taiwan
[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
[3] Natl Chiao Tung Univ, Display Inst, Hsinchu 30010, Taiwan
[4] Natl Chiao Tung Univ, Dept Photon, Inst Electroopt Engn, Hsinchu 30010, Taiwan
来源：
IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 11期
关键词：
In-Zn-Sn-O TFTs; high mobility TFTs;
D O I：
10.1109/LED.2014.2354598
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This letter studies the correlation of postannealing treatment on the electrical performance of amorphous In-Zn-Sn-O thin-film transistor (a-IZTO TFT). The 400 degrees C annealed a-IZTO TFT exhibits a superior performance with field-effect mobility of 39.6 cm(2)/Vs, threshold voltage (V-th) of -2.8 V, and subthreshold swing of 0.25 V/decade. Owing to the structural relaxation by 400 degrees C annealing, both trap states of a-IZTO film and the interface trap states at the a-IZTO/SiO2 interface decrease to 2.16x10(17) cm(-3)eV(-1) and 4.38x10(12) cm(-2) eV(-1), respectively. The positive bias stability of 400 degrees C annealed a-IZTO TFTs is also effectively improved with a Vth shift of 0.92 V.
引用
收藏
页码：1103 / 1105
页数：3
相关论文
共 11 条
[1]  
Bae J. U., 2013, SID S DIG TECH PAPER, V44, P89, DOI DOI 10.1002/J.2168-0159.2013.TB06148.X
[2]   High-Performance Flexible a-IGZO TFTs Adopting Stacked Electrodes and Transparent Polyimide-Based Nanocomposite Substrates [J].
Chien, Chih-Wei ;
Wu, Cheng-Han ;
Tsai, Yu-Tang ;
Kung, Yen-Cheng ;
Lin, Chang-Yu ;
Hsu, Po-Ching ;
Hsieh, Hsing-Hung ;
Wu, Chung-Chih ;
Yeh, Yung-Hui ;
Leu, Chyi-Ming ;
Lee, Tzong-Ming .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (05) :1440-1446
[3]   Effects of Microwave Annealing on Nitrogenated Amorphous In-Ga-Zn-O Thin-Film Transistor for Low Thermal Budget Process Application [J].
Fuh, Chur-Shyang ;
Liu, Po-Tsun ;
Teng, Li-Feng ;
Huang, Sih-Wei ;
Lee, Yao-Jen ;
Shieh, Han-Ping D. ;
Sze, Simon M. .
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (09) :1157-1159
[4]   Role of Oxygen in Amorphous In-Ga-Zn-O Thin Film Transistor for Ambient Stability [J].
Fuh, Chur-Shyang ;
Liu, Po-Tsun ;
Chou, Yi-Teh ;
Teng, Li-Feng ;
Sze, S. M. .
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013, 2 (01) :Q1-Q5
[5]   Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O [J].
Ide, Keisuke ;
Nomura, Kenji ;
Hiramatsu, Hidenori ;
Kamiya, Toshio ;
Hosono, Hideo .
JOURNAL OF APPLIED PHYSICS, 2012, 111 (07)
[6]   Effects of Carrier Concentration, Indium Content, and Crystallinity on the Electrical Properties of Indium-Tin-Zinc-Oxide Thin-Film Transistors [J].
Jang, Kyungsoo ;
Raja, Jayapal ;
Lee, Youn-Jung ;
Kim, Doyoung ;
Yi, Junsin .
IEEE ELECTRON DEVICE LETTERS, 2013, 34 (09) :1151-1153
[7]   Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors [J].
Lee, Jeong-Min ;
Cho, In-Tak ;
Lee, Jong-Ho ;
Kwon, Hyuck-In .
APPLIED PHYSICS LETTERS, 2008, 93 (09)
[8]  
Morosawa N., 2013, SID S, V44, P85
[9]   Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J].
Nomura, K ;
Ohta, H ;
Takagi, A ;
Kamiya, T ;
Hirano, M ;
Hosono, H .
NATURE, 2004, 432 (7016) :488-492
[10]   Operation Characteristics of Thin-Film Transistors Using Very Thin Amorphous In-Ga-Zn-O Channels [J].
Shao, Lijie ;
Nomura, Kenji ;
Kamiya, Toshio ;
Hosono, Hideo .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2011, 14 (05) :H197-H200
12