High-power ridge waveguide InGaAsN lasers fabricated with pulsed anodic oxidation

被引：8

作者：

Qu, Y ^{[1
]}

Liu, CY

Ma, SG

Yuan, S

Bo, BX

Liu, GJ

Jiang, HL

机构：

[1] Nanyang Technol Univ, Sch Mat Engn, Singapore 639798, Singapore

[2] Changchun Univ Sci & Technol, Natl Key Lab High Power Semicond Lasers, Changchun 130022, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2004年 / 16卷 / 11期

关键词：

GaInNAs; InGaAsN; lasers; pulsed anodic oxidation (PAO);

D O I：

10.1109/LPT.2004.834879

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-power InGaAsN triple-quantum-well strain-compensated lasers grown by metal-organic chemical vapor deposition were fabricated with pulsed anodic oxidation. A maximum light power output of 145 mW was obtained from a 4-mum ridge waveguide uncoated laser diode in continuous-wave (CW) mode at room temperature. The devices operated in CW mode up to 130 C with a characteristic temperature of 138 K in range of 20degreesC-90degreesC.

引用

页码：2406 / 2408

页数：3

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