Effect of Interface Nanotexture on Light Extraction of InGaN-Based Green Light Emitting Diodes

被引：3
作者：
Pan Yao-Bo [1 ,2 ,3 ]
Hao Mao-Sheng [4 ]
Qi Sheng-Li [1 ,2 ]
Fang Hao [1 ,2 ]
Zhang Guo-Yi [1 ,2 ]
机构：
[1] Peking Univ, Sch Phys, Beijing 100871, Peoples R China
[2] Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China
[3] Epilight Technol Co Ltd, Shanghai 201210, Peoples R China
[4] IRICO Grp Corp, Ctr Technol, Beijing 100085, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2010年 / 27卷 / 03期
关键词：
SURFACE; GROWTH; EFFICIENCY;
D O I：
10.1088/0256-307X/27/3/038503
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We report the enhancement of the light extraction of InGaN-based green light emitting diodes (LEDs) via the interface nanotexturing. The texture consists of high-density nanocraters on the surface of a sapphire substrate with an in situ etching. The width of nanocraters is about 0.5 mu m and the depth is around 0.1 mu m. It is demonstrated that the LEDs with interface texture exhibit about a 27% improvement in luminance intensity, compared with standard LEDs. High power InGaN-based green LEDs are obtained by using the interface nanotexture. An optical ray-tracing simulation is performed to investigate the effect of interface nanotexture on light extraction.
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页数：4
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