High-Q integrated photonic microresonators on 3C-SiC-on-insulator (SiCOI) platform

被引：69

作者：

Fan, Tianren ^{[1
]}

Moradinejad, Hesam ^{[1
]}

Wu, Xi ^{[1
]}

Eftekhar, Au A. ^{[1
]}

Adibi, Au ^{[1
]}

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, 777 Atlantic Dr NW, Atlanta, GA 30332 USA

来源：

OPTICS EXPRESS | 2018年 / 26卷 / 20期

关键词：

SILICON; SI; REDUCTION; NITRIDE; OPTICS; LAYERS;

D O I：

10.1364/OE.26.025814

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report a high-quality 3C-silicon carbide (SiC)-on-insulator (SiCOI) integrated photonic material platform formed by wafer bonding of crystalline 3C-SiC to a silicon oxide (SiO2)-on-silicon (Si) substrate. This material platform enables to develop integrated photonic devices in SiC without the need for undercutting the Si substrate, in contrast to the structures formed on conventional 3C-SiC-on-Si platforms. In addition, we show a unique process in the SiCOI platform for minimizing the effect of lattice mismatch during the growth of SiC on Si through polishing after bonding. This results in a high-quality SiCOI platform that enables record high Qs of 142,000 in 40 mu m radius SiC microring resonators. The resulting SiCOI platform has a great potential for a wide range of applications in integrated optics, including nonlinear optical devices, quantum optical devices, and high-power optical devices. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

引用

页码：25814 / 25826

页数：13

共 38 条

[1] NONLINEAR REFRACTIVE-INDEX OF OPTICAL-CRYSTALS [J].

ADAIR, R ;

CHASE, LL ;

PAYNE, SA .

PHYSICAL REVIEW B, 1989, 39 (05) :3337-3350

[2] Optical and loss spectra of SiC polytypes from ab initio calculations [J].

Adolph, B ;

Tenelsen, K ;

Gavrilenko, VI ;

Bechstedt, F .

PHYSICAL REVIEW B, 1997, 55 (03) :1422-1429

[3] COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES [J].

BHATNAGAR, M ;

BALIGA, BJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (03) :645-655

[4] 3C-SiC carbonization optimization and void reduction on misoriented Si substrates: from a research reactor to a production scale reactor [J].

Bosi, M. ;

Ferrari, C. ;

Nilsson, D. ;

Ward, P. J. .

CRYSTENGCOMM, 2016, 18 (39) :7478-7486

[5] Defect structure and strain reduction of 3C-SiC/Si layers obtained with the use of a buffer layer and methyltrichlorosilane addition [J].

Bosi, M. ;

Attolini, G. ;

Negri, M. ;

Ferrari, C. ;

Buffagni, E. ;

Frigeri, C. ;

Calicchio, M. ;

Pecz, B. ;

Riesz, F. ;

Cora, I. ;

Osvath, Z. ;

Jiang, L. ;

Borionetti, G. .

CRYSTENGCOMM, 2016, 18 (15) :2770-2779

[6] Enhanced nonlinear optics in photonic-crystal microcavities [J].

Bravo-Abad, Jorge ;

Rodriguez, Alejandro ;

Bermel, Peter ;

Johnson, Steven G. ;

Joannopoulos, John D. ;

Soljacic, Marin .

OPTICS EXPRESS, 2007, 15 (24) :16161-16176

[7] Optical nonlinearities in high-confinement silicon carbide waveguides [J].

Cardenas, Jaime ;

Yu, Mengjie ;

Okawachi, Yoshitomo ;

Poitras, Carl B. ;

Lau, Ryan K. W. ;

Dutt, Avik ;

Gaeta, Alexander L. ;

Lipson, Michal .

OPTICS LETTERS, 2015, 40 (17) :4138-4141

[8] High Q SiC microresonators [J].

Cardenas, Jaime ;

Zhang, Mian ;

Phare, Christopher T. ;

Shah, Shreyas Y. ;

Poitras, Carl B. ;

Guha, Biswajeet ;

Lipson, Michal .

OPTICS EXPRESS, 2013, 21 (14) :16882-16887

[9]

Castelletto S, 2014, NAT MATER, V13, P151, DOI [10.1038/nmat3806, 10.1038/NMAT3806]

[10]

Chung GS, 2004, J KOREAN PHYS SOC, V45, P1557

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