Effects of Inclined Sidewall Structure With Bottom Metal Air Cavity on the Light Extraction Efficiency for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

被引：12
作者：
Zhang, Yonghui [1 ,2 ]
Meng, Ruilin [1 ,2 ]
Zhang, Zi-Hui [1 ,2 ]
Shi, Qiang [1 ,2 ]
Li, Luping [1 ,2 ]
Liu, Guoxu [3 ]
Bi, Wengang [1 ,2 ]
机构：
[1] Hebei Univ Technol, Sch Elect & Informat Engn, Inst Micronano Photoelect & Electromagnet Technol, Tianjin 300401, Peoples R China
[2] Hebei Univ Technol, Key Lab Elect Mat & Devices Tianjin, Tianjin 300401, Peoples R China
[3] Beijing ShineOn Technol Ltd, Beijing 100176, Peoples R China
来源：
IEEE PHOTONICS JOURNAL | 2017年 / 9卷 / 05期
基金：
中国国家自然科学基金;
关键词：
Light-emitting diodes; AlGaN; light extraction efficiency; INPLANE EMISSION; IMPROVEMENT;
D O I：
10.1109/JPHOT.2017.2736642
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An inclined sidewall scattering structure with air cavity characterized by a metal bottom and flat parallel top (Bottom_metal) is proposed to enhance the light extraction efficiency (LEE) for AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs). Compared to the reported sidewall metal inclined sidewall (Sidewall_metal) structure, the Bottom_metal structure can greatly enhance the LEE of DUV LEDs based on three-dimensional finite difference time domain simulations. Further analysis indicates that the existence of the air cavity promotes the Bottom_metal DUV LEDs to mainly utilize the total internal reflection and the Fresnel scattering to scatter the light into the escape cone, which avoids the light absorption from the sidewall metal mirror in the Sidewall_metal structure. Moreover, the unique air cavity having a bottom metal also enhances the scattering ability of the Bottom_metal DUV LEDs because any light within the cavity directing downward will be reflected back, and the parallel top interface of air cavity/AlGaN functions as additional out-light planes not limited by total internal reflection.
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页数：9
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