The behaviour of optical and structural properties of GaInNAs/GaAs quantum wells upon annealing

被引：7
|
作者：
Karirinne, S [1 ]
Pavelescu, EM [1 ]
Konttinen, J [1 ]
Jouhti, T [1 ]
Pessa, M [1 ]
机构：
[1] Tampere Univ Technol, Optoelect Res Ctr, FIN-33101 Tampere, Finland
来源：
NEW JOURNAL OF PHYSICS | 2004年 / 6卷
关键词：
D O I：
10.1088/1367-2630/6/1/192
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Our experiments show that photoluminescence spectra from dilute nitride Ga1-x In-x NyAs1-y/GaAs (y < 2%) quantum wells (QW) are independent of growth temperature of the QWs in the range from 430 to 470&DEG;C. Spectral blue shift upon annealing is large for the low-temperature QW (430&DEG;C), and emission intensity is more enhanced than that of the high-temperature QW (470&DEG;C). Raman scattering reveals that the 430&DEG;C QW contains more In - N bonds than does the 470&DEG;C QW. It seems, therefore, that the blue shift, which is proportional to a number of In - N bonds, originates from the presence of point-like defects of the alloy. Lower emission intensity from the annealed 470&DEG;C sample may be attributed to more pronounced alloy fluctuations and interface roughening, seen in cross-sectional transmission electron micrographs.
引用
收藏
页码：1 / 8
页数：8
相关论文
共 50 条
  • [31] Influence of GaNAs strain-compensation layers on the optical properties of GaIn(N)As/GaAs quantum wells upon annealing
    Liu, HF
    Xiang, N
    JOURNAL OF APPLIED PHYSICS, 2006, 99 (05)
  • [32] Post-growth annealing of GaInNAs layers and GaInNAs/GaAs multiple quantum wells studied by photo reflectance spectroscopy
    Kudrawiec, R
    Misiewicz, J
    Pavelescu, EM
    Konttinen, J
    Pessa, M
    IEE PROCEEDINGS-OPTOELECTRONICS, 2004, 151 (05): : 323 - 327
  • [33] Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells
    Xin, HP
    Kavanagh, KL
    Zhu, ZQ
    Tu, CW
    APPLIED PHYSICS LETTERS, 1999, 74 (16) : 2337 - 2339
  • [34] Investigation of optical gain of GaInNAs/GaAs compressive-strained quantum wells
    Fan, WJ
    Yoon, SF
    Li, MF
    Chong, TC
    PHYSICA B-CONDENSED MATTER, 2003, 328 (3-4) : 264 - 270
  • [35] Observation of quantum dot-like behavior of GaInNAs in GaInNAs/GaAs quantum wells
    Dept. of Elec. and Comp. Engineering, Univ. of California at San Diego, San Diego, CA 92093-0407, United States
    Appl Phys Lett, 16 (2337-2339):
  • [36] Annealing effects on optical and structural properties of 1.3-μm GaInNAs/GaAs quantum-well samples capped with dielectric layers
    Liu, HF
    Peng, CS
    Pavelescu, EM
    Jouhti, T
    Karirinne, S
    Konttinen, J
    Pessa, M
    APPLIED PHYSICS LETTERS, 2004, 84 (04) : 478 - 480
  • [37] On the origin of the unexpected annealing Behavior of GaInNAs quantum wells
    Dworzak, Matthias
    Hildebrant, Radowan
    Hoffmann, Axel
    Geelhaar, Lutz
    Galluppi, Massimo
    Riechert, Henning
    Remmele, Thilo
    Albrecht, Martin
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2007, 46 (25-28): : L614 - L616
  • [38] Effect of Rapid Thermal Annealing on Structural and Luminescence Properties of GaAs/AlGaAs Quantum Wells
    Zhi Min
    Fang Xuan
    Niu Shouzhu
    Fang Dan
    Tang Jilong
    Wang Dengkui
    Wang Xinwei
    Wang Xiaohua
    Wei Zhipeng
    LASER & OPTOELECTRONICS PROGRESS, 2018, 55 (05)
  • [39] Interband transitions in GaInNAs/GaAs single quantum wells
    Manasreh, MO
    Friedman, DJ
    Ma, WQ
    Workman, CL
    George, CE
    Salamo, GJ
    PROGRESS IN SEMICONDUCTORS II- ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2003, 744 : 647 - 652
  • [40] Influence of rapid thermal annealing on optical properties of (In, Ga)(As, N)/GaAs quantum wells
    Dawidowski, Wojciech
    Sciana, Beata
    Latkowska, Magdalena
    Radziewicz, Damian
    Pucicki, Damian
    Bielak, Katarzyna
    Badura, Mikolaj
    Tlaczala, Marek
    ELECTRON TECHNOLOGY CONFERENCE 2013, 2013, 8902
12345