Spin drag effect in temperature dependence of spin-polarized electron mobilities

被引：3

作者：

Takahashi, Yutaka

Sato, Yuuki

Hirose, Fumihiko

Kawaguchi, Hitoshi

机构：

[1] Yamagata Univ, Dept Elect Engn, Yonezawa, Yamagata 9928510, Japan

[2] Japan Sci & Technol Agcy, CREST, Kawaguchi, Saitama 3320012, Japan

[3] Nara Inst Sci & Technol, Grad Sch Mat Sci, Nara 6300192, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 4B期

关键词：

spintronics; semiconductor heterostructure; two-dimensional electron gas; GaAs; spin polarization; electron transport; electron mobility; QUANTUM-WELLS; COULOMB DRAG; GAS; TRANSPORT; HETEROSTRUCTURES; SEMICONDUCTORS; RELAXATION; PRECESSION; DIFFUSION; SYSTEMS;

D O I：

10.1143/JJAP.46.2585

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of electron-electron scattering on electron transport in spin-polarized, two-dimensional electron gas is studied in semiconductor heterostructures. We calculate electron mobilities for spin-up and -down electrons separately in a GaAs heterostructure at temperatures below 10 K and an electron density of 2 x 10(11) cm(-2). We find that the electron-electron scattering has a significant influence on the transport in the spin-polarized system. Our numerical calculations show that the contribution from electron-electron scattering, compared with those from impurity scattering and phonon scattering, may be detectable in the temperature dependence of electron mobilities in a high-quality heterostructure when the spin relaxation rate is low.

引用

页码：2585 / 2591

页数：7

共 30 条

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[Anonymous], SEMICONDUCTOR SPINTR

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Bastard G, 1988, Wave Mechanics Applied to Semiconductor Heterostructure

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