Defect detection of IC wafer based on two-dimension wavelet transform

被引:16
作者
Liu, Hongxia [1 ]
Zhou, Wen [1 ]
Kuang, Qianwei [1 ]
Cao, Lei [1 ]
Gao, Bo [1 ]
机构
[1] Xidian Univ, Key Lab, Minist Educ Wide Band Gap Semicond Devices, Sch Microelect, Xian 710071, Shaanxi, Peoples R China
来源
MICROELECTRONICS JOURNAL | 2010年 / 41卷 / 2-3期
基金
中国国家自然科学基金;
关键词
Defect detection; Integrated circuit (IC) wafer; Two-dimension wavelet transform; CLASSIFICATION; PATTERNS;
D O I
10.1016/j.mejo.2010.01.015
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Defect detection of integrated circuit (IC) wafer based on two-dimension wavelet transform (2-D DWT) is presented in this paper. By utilizing the characteristics many of the same chips in a wafer, three images with defects located in the same position and different chips are obtained. The defect images contain the standard image without any defects. 2-D DWT presented in the paper can extract the standard image from the three defect images. The algorithm complexity of the method is close to that of 2-D DWT. After obtaining the standard image, the speed and accuracy of defects detection can be greatly enhanced using the detection method presented in the paper. Using the image gray-scale matching technology, impact of illumination on IC defect detection is solved. Experiments demonstrate that 2-D DWT is fast and accurate to defects detection in an IC image, and the method has high robustness for illumination. (C) 2010 Elsevier Ltd. All rights reserved.
引用
收藏
页码:171 / 177
页数:7
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