Effect of H2 content on reliability of ultrathin in-situ steam generated (ISSG) SiO2

被引：28

作者：

Luo, TY ^{[1
]}

Laughery, M ^{[1
]}

Brown, GA ^{[1
]}

Al-Shareef, HN ^{[1
]}

Watt, VHC ^{[1
]}

Karamcheti, A ^{[1
]}

Jackson, MD ^{[1
]}

Huff, HR ^{[1
]}

机构：

[1] Int Sematech Inc, Austin, TX 78741 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2000年 / 21卷 / 09期

关键词：

charge-to-breakdown; in-situ steam generated (ISSG) oxide; Si dangling bonds; SILC; structural transition layer;

D O I：

10.1109/55.863100

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter demonstrates the effect of H-2 percentage during oxidation on the quality of the in-situ steam generated (ISSG) oxide. Our results indicate the reliability of ISSG oxide is considerably improved as the H-2 percentage increases, from the viewpoint of stress-induced leakage current (SILC) and charge-to-breakdown (Q(BD)) Such enhanced reliability of the ISSG oxide may be explained by the reduction of defects in the SiO2 network within the structural transition layer, such as Si dangling bonds, weak Si-Si and strained Si-O bonds, by highly reactive oxygen atoms which are hypothesized to be dissociated from the molecular oxygen due to the presence of hydrogen.

引用

页码：430 / 432

页数：3

共 18 条

[1] IMPACT IONIZATION, TRAP CREATION, DEGRADATION, AND BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON
DIMARIA, DJ
CARTIER, E
ARNOLD, D
[J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (07) : 3367 - 3384
[2] Influence of 1nm-thick structural "strained-layer" near SiO2/Si interface on sub-4nm-thick gate oxide reliability
Eriguchi, K
Harada, Y
Niwa, M
[J]. INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 175 - 178
[3] SIO2/SI INTERFACE STRUCTURES AND RELIABILITY CHARACTERISTICS
HASEGAWA, E
ISHITANI, A
AKIMOTO, K
TSUKIJI, M
OHTA, N
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (01) : 273 - 282
[4] EFFECT OF FINAL ANNEALING ON HOT-ELECTRON-INDUCED MOSFET DEGRADATION
HSU, FC
HUI, J
CHIU, KY
[J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) : 369 - 371
[5] Cross-sectional transmission electron microscope studies on intrinsic breakdown spots of thin gate oxides
Ikeda, S
Okihara, M
Uchida, H
Hirashita, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (5A): : 2561 - 2564
[6] KIMIZUKA N, 1998, VLSI TECH S, P162
[7] Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxides
Lo, SH
Buchanan, DA
Taur, Y
[J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1999, 43 (03) : 327 - 337
[8] Miner G, 1999, ELEC SOC S, V99, P3
[9] Radical oxygen (O*) process for highly-reliable SiO2 with higher film-density and smoother SiO2/Si interface
Nagamine, M
Itoh, H
Satake, H
Toriumi, A
[J]. INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST, 1998, : 593 - 596
[10] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS
NICOLLIA.EH
BERGLUND, CN
SCHMIDT, PF
ANDREWS, JM
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5654 - &

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