The noise associated with the kink effect in GaAs FETs

被引：0
|
作者：
O'Connor, HTA [1 ]
Jones, BK [1 ]
机构：
[1] Univ Lancaster, Sch Phys & Chem, Lancaster LA1 4YB, England
来源：
NOISE IN PHYSICAL SYSTEMS AND 1/F FLUCTUATIONS, PROCEEDINGS OF THE 14TH INTERNATIONAL CONFERENCE | 1997年
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D O I：
暂无
中图分类号：
O42 [声学];
学科分类号：
070206 ; 082403 ;
摘要：
The 'kink' effect, steps in the saturation current of a MESFET with increasing drain voltage, has been investigated using excess noise and other methods. Several kinks can be found in one device by changing the temperature. It is suggested that the origin is the change in occupancy of deep levels induced by hot electron effects. The relevant traps have been identified and their location determined.
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页码：19 / 22
页数：4
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