Low phase noise sub-1 V supply 12 and 18 GHz VCOs in 90 nm CMOS

被引：13

作者：

Jacobsson, Harald ^{[1
]}

Bao, Mingquan ^{[1
]}

Aspemyr, Lars ^{[1
]}

Mercha, Abdelkarim ^{[2
]}

Carchon, Geert ^{[2
]}

机构：

[1] Ericsson AB, S-43184 Molndal, Sweden

[2] IMEC, Leuven, Belgium

来源：

2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5 | 2006年

关键词：

CMOS integrated circuits; microwave integrated circuits; microwave radio communication; phase noise; voltage controlled oscillators;

D O I：

10.1109/MWSYM.2006.249658

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Two low phase noise, sub-1 V supply VCO topologies have been explored at 12 and 18 GHz; in a 90 mn CMOS technology for direct LO generation in microwave link applications. At 12 GHz, a cross-coupled differential NMOS pair VCO achieves a phase noise of -117 dBc/Hz at 1 MHz offset while consuming only 1.6 mW from a 0.47 V supply. At 18 GHz a Hartley VCO with a novel tuning scheme reached -119 dBc/Hz at I MHz offset, consuming 4.2 mW from a 0.8 V supply. The well established VCO FOM is 196 and 199 for the 12 and 18 GHz VCOs, respectively.

引用

页码：573 / 576

页数：4

共 13 条

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