Formation of Si1+ in the early stages of the oxidation of the Si[001] 2x1 surface

被引：9

作者：

Herrera-Gomez, Alberto ^{[1
]}

Aguirre-Tostado, Francisco-Servando ^{[2
]}

Pianetta, Piero ^{[3
]}

机构：

[1] CINVESTAV, Unidad Queretaro, Queretaro 76230, Mexico

[2] Ctr Invest Mat Avanzados, Monterrey 66600, Nuevo Leon, Mexico

[3] SLAC Natl Accelerator Ctr, Menlo Pk, CA 94025 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 2016年 / 34卷 / 02期

关键词：

CORE-LEVEL SPECTROSCOPY; INITIAL OXIDATION; SI(001)-2 X-1; PHOTOELECTRON-SPECTROSCOPY; CHARGE-TRANSFER; PHOTOEMISSION; INTERFACE; SPECTRA; ENERGY; LAYER;

D O I：

10.1116/1.4936336

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The early stages of the oxidation of the Si[001] 2 x 1 surface were studied with synchrotron radiation photoelectron spectroscopy. The analysis was based on the block approach, which is a refinement of spectra-subtraction that accounts for changes on the background signal and for band-bending shifts. By this method, it was possible to robustly show that the formation of Si1+ is due to oxygen bonding to the upper dimer atoms. Our results contrast with ab initio calculation, which indicates that the most favorable bonding site is the back-bond of the down-dimer. (C) 2015 American Vacuum Society.

引用

页数：4

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