Design principle for a p-type oxide gate layer on AlGaN/GaN toward normally-off HEMTs: Li-doped NiO as a model

被引:17
作者
Li, Guanjie [1 ,2 ]
Li, Xiaomin [1 ,3 ]
Zhao, Junliang [4 ]
Yan, Fawang [4 ]
Zhu, Qiuxiang [1 ]
Gao, Xiangdong [1 ,3 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Ceram, State Key Lab High Performance Ceram & Superfine, 1295 Dingxi Rd, Shanghai 200050, Peoples R China
[2] Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China
[3] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, 19A Yuquan Rd, Beijing 100049, Peoples R China
[4] Nanjing NanoArc New Mat Technol Co Ltd, 37 Jiangjun Ave, Nanjing 211106, Peoples R China
基金
国家重点研发计划; 中国国家自然科学基金;
关键词
THRESHOLD VOLTAGE SHIFT; EPITAXIAL-GROWTH; BAND OFFSETS; THIN-FILMS; GAN; TECHNOLOGY; SEMICONDUCTORS; POLARIZATION; INTERFACE; MECHANISM;
D O I
10.1039/c9tc04467a
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Integration of the p-type oxide gate layer on AlGaN/GaN is a promising approach to explore normally-off high electron mobility transistors (HEMTs). However, the critical reason for the ultralow threshold voltage in intrinsic p-type oxide gated HEMTs remains elusive. Herein, Li-doped NiO thin films with various doping contents were grown on AlGaN/GaN/Si substrates by pulsed laser deposition (PLD) to identify the most important physical properties and design principle of p-type oxide for normally-off HEMTs. With the increasing Li doping content up to 25%, Ni0.75Li0.25O on AlGaN/GaN exhibits excellent epitaxial growth quality with good interfacial state, a wide band gap of 3.65 eV and an ultrahigh hole concentration of 6.81 x 10(19) cm(-3). Nevertheless, the Ni0.75Li0.25O/AlGaN/GaN/Si heterostructure still suffers from a low threshold voltage of merely -2.12 V. By resolving the band alignment at the Ni0.75Li0.25O/AlGaN interface and the depletion mechanism for p-type Ni0.75Li0.25O on 2DEG, the band alignment matching is ascribed to be the most critical issue for intrinsic p-type oxide gated normally-off HEMTs with a low threshold voltage, that is, a relatively small energy level difference value between the conduction band of GaN and the valence band of intrinsic p-type oxide. Based on the results, the design principle of the p-type oxide gate layer on AlGaN/GaN for normally-off HEMTs is proposed, and p-type oxides doped from intrinsic n-type oxides are suspected to be competitive candidates.
引用
收藏
页码:1125 / 1134
页数:10
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