Enhanced low dose rate sensitivity (ELDRS) observed in RADFET sensor

被引：0
作者：
Kim, SJ [1 ]
Seon, J [1 ]
Min, KW [1 ]
Shin, YH [1 ]
Choe, W [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Phys, Taejon 305701, South Korea
来源：
PROCEEDINGS OF THE 7TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS | 2004年 / 536卷
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D O I：
暂无
中图分类号：
V [航空、航天];
学科分类号：
08 ; 0825 ;
摘要：
We report the dose rate dependence of a pMOSFET (REM RADFET TOT500) that has been often employed as a dosimeter in previous space missions. A series of laboratory experiments show that ELDRS actually exists for the device. The tendency seems more distinct in the biased state than in the unbiased state.
引用
收藏
页码：669 / 671
页数：3
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