共 40 条
DFT plus U investigation of magnetocrystalline anisotropy of Mn-doped transition-metal dichalcogenide monolayers
被引:16
|作者:
Smiri, Adlen
[1
,2
,3
]
Jaziri, Sihem
[1
,4
,5
]
Lounis, Samir
[6
,7
,8
,9
,10
]
Gerber, Iann C.
[2
,3
]
机构:
[1] Univ Carthage, Lab Phys Mat Struct & Proprietes, Fac Sci Bizerte, Jarzouna 7021, Tunisia
[2] Univ Fed Toulouse Midi Pyrenees, LPCNO, 135 Ave Rangueil, F-31077 Toulouse, France
[3] UPS, CNRS, INSA, 135 Ave Rangueil, F-31077 Toulouse, France
[4] Univ Tunis el Manar, Fac Sci Tunis, Lab Phys Matiere Condensee, Campus Univ, Tunis 2092, Tunisia
[5] Univ Tunis el Manar, Dept Phys, Campus Univ, Tunis 2092, Tunisia
[6] Forschungszentrum Julich, Peter Grunberg Inst, D-52425 Julich, Germany
[7] Forschungszentrum Julich, Inst Adv Simulat, D-52425 Julich, Germany
[8] JARA, D-52425 Julich, Germany
[9] Univ Duisburg Essen, Fac Phys, D-47053 Duisburg, Germany
[10] CENIDE, D-47053 Duisburg, Germany
基金:
欧洲研究理事会;
关键词:
STRUCTURAL STABILITY;
TRANSPORT-PROPERTIES;
MAGNETIC-ANISOTROPY;
MOS2;
EXCITONS;
ENERGY;
LIMIT;
D O I:
10.1103/PhysRevMaterials.5.054001
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
Doped transition-metal dichalcogenide monolayers exhibit exciting magnetic properties for the benefit of two-dimensional spintronic devices. Using density functional theory (DFT) incorporating Hubbard-type correction (DFT + U) to account for the electronic correlation, we study the magnetocrystalline anisotropy energy (MAE) characterizing Mn-doped MS2 (M = Mo, W) monolayers. A single isolated Mn dopant exhibits a large perpendicular magnetic anisotropy of 35 meV (8 meV) in the case of Mn-doped WS2 (MoS2) monolayer. This value originates from the Mn in-plane orbitals degeneracy lifting due to the spin-orbit coupling. In pairwise doping, the magnetization easy axis changes to the in-plane direction with a weak MAE compared to single Mn doping. Our results suggest that diluted Mn-doped MS2 monolayers, where the Mn dopants are well separated, could potentially be a candidate for the realization of ultimate nanomagnet units for future magnetic storage applications.
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页数:12
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