Preparation of Ba2Si2TiO8 thin films by magnetron sputtering

被引：8
|
作者：
Zhu, MK [1 ]
Yang, YH [1 ]
Li, XH [1 ]
Wang, B [1 ]
Wang, H [1 ]
Yan, H [1 ]
机构：
[1] Beijing Polytech Univ, Key Lab Adv Funct Mat, China Educ Minist, Beijing 100022, Peoples R China
来源：
MICROELECTRONIC ENGINEERING | 2003年 / 66卷 / 1-4期
关键词：
fresnoite; Ba2Si2TiO8; thin film; magnetron sputtering;
D O I：
10.1016/S0167-9317(02)00994-2
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Fresnoite (Ba2Si2TiO8, BTS) thin films were grown on the polished Si(100) substrates by magnetron sputtering. The films were characterized using Fourier transforming infrared (FTIR), X-ray diffraction (XRD) and energy dispersion spectrometer (EDS). The results show that the crystallinity of BTS thin film increases with higher temperature and longer annealing time. Combined with XRD data, the strong FTIR peaks corresponding to Ti-O and Si-O groups indicate the formation of Fresnoite phase in the films. (C) 2002 Elsevier Science B.V. All rights reserved..
引用
收藏
页码：745 / 749
页数：5
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