Adsorption processes of Se on the GaAs(111)A-(2x2) surface

被引：2

作者：

Ohtake, A ^{[1
]}

Komura, T

Hanada, T

Miwa, S

Yasuda, T

Yao, T

机构：

[1] JRCAT, Tsukuba, Ibaraki 3050046, Japan

[2] ATP, Tsukuba, Ibaraki 3050046, Japan

[3] Natl Inst Adv Interdisciplinary Res, NAIR, Tsukuba, Ibaraki 3058562, Japan

[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

APPLIED SURFACE SCIENCE | 2000年 / 162卷

关键词：

adsorption; surface structure; gallium arsenide; selenium; electron diffraction;

D O I：

10.1016/S0169-4332(00)00226-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The adsorption processes of Se on the GaAs(111)A surface have been systematically studied using reflection high-energy electron diffraction (RHEED), scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and total-reflection-angle X-ray spectroscopy (TRAXS). We have found that a reconstructed structure of (2 root 3 x 2 root 3)-R30 degrees is formed on the Se-adsorbed GaAs(111)A. A structure model has been proposed for the GaAs(111)A-(2 root 3 x 2 root 3)-R30-Se surface, which consists of two Se trimers located at a hollow site of the GaAs(111)A surface and three Ga vacancies per unit cell. The proposed structure model sufficiently explains experimental data from RHEED, XPS, and STM, and satisfies electron counting requirements. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：419 / 424

页数：6

共 25 条

[1] VACANCY-INDUCED 2X2 RECONSTRUCTION OF THE GA(111) SURFACE OF GAAS [J].