Thallium- and mercury-containing cuprates in electronic devices

被引：0

作者：

Ivanov, ZG ^{[1
]}

Johansson, LG

机构：

[1] Chalmers Univ Technol, Dept Microelect & Nanosci, S-41296 Gothenburg, Sweden

[2] Chalmers Univ Technol, Dept Inorgan Chem, S-41296 Gothenburg, Sweden

[3] Univ Gothenburg, S-41296 Gothenburg, Sweden

来源：

APPLIED SUPERCONDUCTIVITY 1997, VOLS 1 AND 2: VOL 1: SMALL SCALE AND ELECTRONIC APPLICATIONS; VOL 2: LARGE SCALE AND POWER APPLICATIONS | 1997年 / 158期

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中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Results on the synthesis of Tl- and Hg-based thin films featuring different numbers of CuO2 planes is presented. At optimal annealing conditions T-c's of 108K and 92K were achieved for Tl-2212 and Tl-2201 films, respectively. Tl-2201 films can be grown with orthorhombic or tetragonal structure depending mainly on the Tl content. Bicrystal and step edge weak links were fabricated in Tl-2212 films with T-c ranging from 105 to 109K. The weak links were studied and applied in DC SQUIDs. Microwave resonators with microstrip configuration was designed and used in oscillators at 12 GHz frequency.

引用

页码：7 / 12

页数：6

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