Characterization of surface- and buried-channel detection transistors for CCD on-chip amplifiers

被引：3

作者：

Centen, PG ^{[1
]}

Roks, E ^{[1
]}

机构：

[1] Philips Imaging Technol, MS WAG 11, NL-5656 AA Eindhoven, Netherlands

来源：

INTERNATIONAL ELECTRON DEVICES MEETING - 1997, TECHNICAL DIGEST | 1997年

关键词：

D O I：

10.1109/IEDM.1997.650311

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low noise floating-diffusion amplifiers, made in double and single layer membrane poly-Si technology, are characterized including scaling rules for the 1/f noise, thermal noise, 3 dB bandwidth and conversion gain. A comparison is made between buried-and surface-channel detection node transistors for various channel widths, lengths, and bias currents. A new method for measuring the total detection node capacitance is used. The results are modeled using a noise model that includes shot noise from hot-electron effects.

引用

页码：193 / 196

页数：4