Effects of MgO-doping on electrical properties and microstructure of BaTiO3

被引:37
作者
Jeong, J [1 ]
Han, YH [1 ]
机构
[1] Sungkyunkwan Univ, Dept Mat Engn, Suwon 440746, South Korea
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2004年 / 43卷 / 8A期
关键词
MgO; BaTiO3; degradation; oxygen vacancy; MLCC;
D O I
10.1143/JJAP.43.5373
中图分类号
O59 [应用物理学];
学科分类号
摘要
Degradation behaviors of Mg-doped BaTiO3 have been studied in terms of oxygen vacancy concentration and microstructural development. Mg-doped BaTiO3 powders were precisely synthesized by the Pechini method. As MgO content was increased to 1.0 mol%, Curie points moved to lower temperatures and dielectric constants decreased. The specimens doped with MgO showed higher leakage currents under the continuously applied dc field at a high temperature (100degreesC) during the aging process, compared with the undoped BaTiO3. With low levels of MgO (< 1.0 mol%), the microstructure is similar to that of undoped BaTiO3, whereas a significant reduction in grain size was observed with higher levels (>2.0 mol%).
引用
收藏
页码:5373 / 5377
页数:5
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