Optical properties of InGaN/GaN nanopillars fabricated by postgrowth chemically assisted ion beam etching

被引：92

作者：

Kawakami, Y. ^{[1
,2
]}

Kaneta, A. ^{[1
,2
]}

Su, L. ^{[1
]}

Zhu, Y. ^{[1
]}

Okamoto, K. ^{[1
]}

Funato, M. ^{[1
,2
]}

Kikuchi, A. ^{[2
,3
]}

Kishino, K. ^{[2
,3
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

[2] JST, CREST, Kawaguchi, Saitama 3320012, Japan

[3] Sophia Univ, Dept Elect & Elect Engn, Tokyo 1028554, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2010年 / 107卷 / 02期

关键词：

etching; gallium compounds; III-V semiconductors; indium compounds; ion beam effects; nanofabrication; nanopatterning; nanostructured materials; optical microscopy; photoluminescence; semiconductor quantum wells; stress relaxation; wide band gap semiconductors; LIGHT-EMITTING-DIODES; QUANTUM-WELLS; FIELD; SEMICONDUCTORS; RECOMBINATION; MICROSCOPY; EPITAXY; GROWTH;

D O I：

10.1063/1.3280032

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical properties of InGaN/GaN quantum wells, which were nanopatterned into cylindrical shapes with diameters of 2 mu m, 1 mu m, or 500 nm by chemically assisted ion beam etching, were investigated. Photoluminescence (PL) and time-resolved PL measurements suggest inhomogeneous relaxation of the lattice-mismatch induced strain in the InGaN layers. By comparing to a strain distribution simulation, we found that partial stain relaxation occurs at the free side wall, but strain remains in the middle of the pillar structures. The strain relaxation leads to an enhanced radiative recombination rate by a factor of 4-8. On the other hand, nonradiative recombination processes are not strongly affected, even by postgrowth etching. Those characteristics are clearly reflected in the doughnut-shape emission patterns observed by optical microscopy.

引用

页数：7

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