Magnetoresistance and switching properties of magnetic tunnel junctions using amorphous CoSiB free layer

被引：14
作者：
Hwang, J. Y. [1 ]
Kim, S. S. [1 ]
Rhee, J. R. [1 ]
机构：
[1] Sookmyung Womens Univ, Dept Phys, Seoul 140742, South Korea
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2007年 / 310卷 / 02期
关键词：
magnetic tunnel junction; amorphous magnetic material; tunneling magnetoresistance; switching field; sensitivity; coercivity;
D O I：
10.1016/j.jmmm.2006.10.816
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have investigated the tunneling magnetoresistance ( TMR) effect and switching characteristics for magnetic tunnel junctions ( MTJs) with amorphous ferromagnetic Co75Si15B10 free layer compared to MTJs with Co75Fe25, Ni80Fe20 and Co70.5Fe4.5Si15B10 free layers. Since amorphous CoSiB had a low saturation magnetization ( M-s = 470 emu/ cm(3)) and a modest anisotropy constant ( K-u = 1500 erg/ cm(3)), the MTJ with this free layer showed better switching characteristics, especially CoSiB- based MTJ exhibited much lower switching field ( H-sw = 3 Oe) and interlayer coupling field ( H-int = 10 Oe) than MTJs with the other free layers, but TMR ratio showed relatively low value ( 23%). In addition, the bias voltage dependence of TMR ratio in CoSiB- based double MTJ was improved compared to that of single MTJ. It was expected that CoSiB was a potential candidate material as the free layer for use in high- density magnetic random access memory ( MRAM) with an MTJ element. (c) 2006 Elsevier B. V. All rights reserved.
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页码：1943 / 1945
页数：3
相关论文
共 7 条
[1]  
HIRITA E, 2002, GIANT MAGNETO RESIST
[2]   LARGE MAGNETORESISTANCE AT ROOM-TEMPERATURE IN FERROMAGNETIC THIN-FILM TUNNEL-JUNCTIONS [J].
MOODERA, JS ;
KINDER, LR ;
WONG, TM ;
MESERVEY, R .
PHYSICAL REVIEW LETTERS, 1995, 74 (16) :3273-3276
[3]   Magnetization switching and tunneling magnetoresistance effects of MTJs']Js with synthetic antiferromagnet free layers consisting of amorphous CoFeSiB [J].
Rhee, JR ;
Hwang, JY ;
Kim, SS ;
Kim, AY ;
Chun, BS ;
Yoo, IS ;
Oh, BS ;
Kim, YK ;
Kim, TW ;
Park, WJ .
IEEE TRANSACTIONS ON MAGNETICS, 2005, 41 (10) :2685-2687
[4]   Spin-dependent tunneling in double tunnel junctions with a discontinuous intermediate layer [J].
Saito, Y ;
Nakajima, K ;
Tanaka, K ;
Inomata, K .
IEEE TRANSACTIONS ON MAGNETICS, 1999, 35 (05) :2904-2906
[5]  
STONER EC, 1948, PHILOS T R SOC LON A, V240, P559
[6]   70% TMR at room temperature for SDT sandwich junctions with CoFeB as free and reference layers [J].
Wang, DX ;
Nordman, C ;
Daughton, JM ;
Qian, ZH ;
Fink, J .
IEEE TRANSACTIONS ON MAGNETICS, 2004, 40 (04) :2269-2271
[7]   High magnetoresistance in Co-Fe-B-based double barrier magnetic tunnel junction [J].
Zeng, Z. M. ;
Wei, H. X. ;
Jiang, L. X. ;
Du, G. X. ;
Zhan, W. S. ;
Han, X. F. .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2006, 303 (02) :E219-E222
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