Nanocrystalline Mg Doped ZnO Dilute Magnetic Semiconductor Prepared by Chemical Route

被引：19

作者：

Chandramohan, R. ^{[1
]}

Thirumalai, J. ^{[1
]}

Vijayan, T. A. ^{[1
]}

Valanarasu, S. ^{[3
]}

Vizhian, S. Elhil ^{[1
]}

Srikanth, M. ^{[1
]}

Swaminathan, V. ^{[2
]}

机构：

[1] Sree Sevugan Annamalai Coll, Dept Phys, Devakottai 630303, India

[2] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 637798, Singapore

[3] Ananda Coll, Dept Phys, Devakottai 630303, India

来源：

ADVANCED SCIENCE LETTERS | 2010年 / 3卷 / 03期

关键词：

ZINC-OXIDE FILMS; THIN-FILMS; DEPOSITION; TEMPERATURE; AL; TRANSPARENT; PYROLYSIS; LAYERS; LI;

D O I：

10.1166/asl.2010.1129

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

This paper reports on the comparative investigation of ZnO and Mg doped ZnO (MZO) dilute magnetic semi-conducting thin films prepared by chemical bath deposition. The films were characterized for their structural properties, optical and morphological studies. The films were polycrystalline in nature with hexagonal phase having (002) preferential orientation. The typical grain size were also estimated and found to be of an average of 200 nm. It was found that Mg doping into ZnO, modulated a shift in optical band gap of the MZO films in the UV region of 3.22 eV. The films exhibit ferromagnetic properties for magnesium doping concentration of 2 at%.

引用

页码：319 / 322

页数：4

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