Optical properties and defect characterization of ZnSe laser diodes grown on tellurium-terminated GaAs

被引：8

作者：

Albert, D ^{[1
]}

Olszowi, B ^{[1
]}

Spahn, W ^{[1
]}

Nurnberger, J ^{[1
]}

Schull, K ^{[1
]}

Korn, M ^{[1
]}

Hock, V ^{[1
]}

Ehinger, M ^{[1
]}

Faschinger, W ^{[1
]}

Landwehr, G ^{[1
]}

机构：

[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷

关键词：

semiconductors; II-VI laser diodes; Te terminated GaAs; degradation;

D O I：

10.1016/S0022-0248(98)80119-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present studies of electrical properties, electroluminescence (EL) and degradation behaviour of laser diodes grown on GaAs, terminated with Te (Te:GaAs). Compared to conventional lasers (grown on Zn-treated GaAs), the lasers grown on Te:GaAs show a comparable stacking fault density, but higher spontaneous emission and very low threshold current densities. The degradation of such a laser structure has been observed through a transparent contact using electroluminescence imaging. As with conventional laser diodes, dark spots are observed and the dimming and growth of these dark spots has been monitored during the lifetime of the device. In addition, a continuous darkening of the background between the spots has been also observed. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：571 / 574

页数：4

共 7 条

[1] (100) DARK LINE DEFECT IN II-VI BLUE-GREEN LIGHT EMITTERS [J].