Kinetically enhanced correlation and anticorrelation effects in self-organized quantum dot stacks -: art. no. 121202

被引:33
作者
Meixner, M [1 ]
Schöll, E [1 ]
机构
[1] Tech Univ Berlin, Inst Theoret Phys, D-10623 Berlin, Germany
关键词
MONTE-CARLO SIMULATIONS; MOLECULAR-BEAM EPITAXY; LATERAL CORRELATIONS; ZNSE MATRIX; GROWTH; SUPERLATTICES; ISLANDS; GAAS; GAAS(001); SURFACE;
D O I
10.1103/PhysRevB.67.121202
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present kinetic Monte Carlo simulations explaining the correlation and anticorrelation effects observed in the self-organized growth of stacks of semiconductor quantum dots. Our simulations clarify the delicate interplay of kinetics and thermodynamics in strained heteroepitaxial semiconductor systems, and predict a sharp transition between correlated and anticorrelated growth as a function of the buffer thickness between the quantum dot layers. The vital role of the kinetically controlled and strain-mediated island size distributions is pointed out.
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页数:4
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共 35 条
  • [1] Barabasi AL, 1997, APPL PHYS LETT, V70, P764, DOI 10.1063/1.118253
  • [2] Bimberg D., 1999, Quantum Dot Heterostructures
  • [3] NEW ALGORITHM FOR MONTE-CARLO SIMULATION OF ISING SPIN SYSTEMS
    BORTZ, AB
    KALOS, MH
    LEBOWITZ, JL
    [J]. JOURNAL OF COMPUTATIONAL PHYSICS, 1975, 17 (01) : 10 - 18
  • [4] THEORY OF HOMOEPITAXY ON SI(001) .1. KINETICS DURING GROWTH
    CLARKE, S
    WILBY, MR
    VVEDENSKY, DD
    [J]. SURFACE SCIENCE, 1991, 255 (1-2) : 91 - 110
  • [5] Cross-sectional scanning-tunneling microscopy of stacked InAs quantum dots
    Eisele, H
    Flebbe, O
    Kalka, T
    Preinesberger, C
    Heinrichsdorff, F
    Krost, A
    Bimberg, D
    Dähne-Prietsch, M
    [J]. APPLIED PHYSICS LETTERS, 1999, 75 (01) : 106 - 108
  • [6] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF INAS/GAAS STRAINED-LAYER SUPERLATTICES
    GOLDSTEIN, L
    GLAS, F
    MARZIN, JY
    CHARASSE, MN
    LEROUX, G
    [J]. APPLIED PHYSICS LETTERS, 1985, 47 (10) : 1099 - 1101
  • [7] Room-temperature continuous-wave lasing from stacked InAs/GaAs quantum dots grown by metalorganic chemical vapor deposition
    Heinrichsdorff, F
    Mao, MH
    Kirstaedter, N
    Krost, A
    Bimberg, D
    Kosogov, AO
    Werner, P
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (01) : 22 - 24
  • [8] Simulation of GaAs growth and surface recovery with respect to gallium and arsenic surface kinetics
    Heyn, C
    Harsdorff, M
    [J]. PHYSICAL REVIEW B, 1997, 55 (11) : 7034 - 7038
  • [9] Strain induced vertical and lateral correlations in quantum dot superlattices
    Holy, V
    Springholz, G
    Pinczolits, M
    Bauer, G
    [J]. PHYSICAL REVIEW LETTERS, 1999, 83 (02) : 356 - 359
  • [10] Quantum dot self-assembly in growth of strained-layer thin films: A kinetic Monte Carlo study
    Khor, KE
    Das Sarma, S
    [J]. PHYSICAL REVIEW B, 2000, 62 (24) : 16657 - 16664