Simultaneous two-state lasing in quantum-dot lasers

被引：265

作者：

Markus, A ^{[1
]}

Chen, JX

Paranthoën, C

Fiore, A

Platz, C

Gauthier-Lafaye, O

机构：

[1] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

[2] CNR, Inst Photon & Nanotechnol, I-00156 Rome, Italy

[3] INSA Rennes, Phys Solides Lab, F-35043 Rennes, France

[4] Alcatel CIT, Opto Plus, F-91461 Marcoussis, France

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 12期

关键词：

D O I：

10.1063/1.1563742

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate simultaneous lasing at two well-separated wavelengths in self-assembled InAs quantum-dot lasers, via ground-state (GS) and excited-state (ES) transitions. This effect is reproducible and strongly depends on the cavity length. By a master-equation model, we attribute it to incomplete clamping of the ES population at the GS threshold. (C) 2003 American Institute of Physics.

引用

页码：1818 / 1820

页数：3

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