Simultaneous two-state lasing in quantum-dot lasers

被引：265

作者：

Markus, A ^{[1
]}

Chen, JX

Paranthoën, C

Fiore, A

Platz, C

Gauthier-Lafaye, O

机构：

[1] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland

[2] CNR, Inst Photon & Nanotechnol, I-00156 Rome, Italy

[3] INSA Rennes, Phys Solides Lab, F-35043 Rennes, France

[4] Alcatel CIT, Opto Plus, F-91461 Marcoussis, France

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 12期

关键词：

D O I：

10.1063/1.1563742

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate simultaneous lasing at two well-separated wavelengths in self-assembled InAs quantum-dot lasers, via ground-state (GS) and excited-state (ES) transitions. This effect is reproducible and strongly depends on the cavity length. By a master-equation model, we attribute it to incomplete clamping of the ES population at the GS threshold. (C) 2003 American Institute of Physics.

引用

页码：1818 / 1820

页数：3

共 50 条

[31] Quantum-dot lasing and photonic molecule behavior in microdisk lasers [J].

Baba, T ;

Ide, T ;

Ishii, S ;

Tatebayashi, J ;

Iwamoto, T ;

Nakaoka, T ;

Arakawa, Y .

2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS), 2005, :937-938

[32] Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers [J].

Shernyakov, Yu. M. ;

Maksimov, M. V. ;

Zhukov, A. E. ;

Savelyev, A. V. ;

Korenev, V. V. ;

Zubov, F. I. ;

Gordeev, N. Yu. ;

Livshits, D. A. .

SEMICONDUCTORS, 2012, 46 (10) :1331-1334

[33] Effect of active-region modulation doping on simultaneous ground-state and excited-state lasing in quantum-dot lasers [J].

Yu. M. Shernyakov ;

M. V. Maksimov ;

A. E. Zhukov ;

A. V. Savelyev ;

V. V. Korenev ;

F. I. Zubov ;

N. Yu. Gordeev ;

D. A. Livshits .

Semiconductors, 2012, 46 :1331-1334

[34] Twofold decoherence brought on by the phonon bath in a quantum-dot two-state system [J].

Chen, Zhi-De .

PHYSICAL REVIEW A, 2015, 92 (04)

[35] Energy dissipation during two-state switching for quantum-dot cellular automata [J].

Pidaparthi, Subhash S. ;

Lent, Craig S. .

JOURNAL OF APPLIED PHYSICS, 2021, 129 (02)

[36] Effects of Annealing and p-Doping on the Two-State Competition in 1.3 μm InAs/GaAs Quantum-Dot Lasers [J].

Zhao, H. X. ;

Yoon, S. F. ;

Ngo, C. Y. ;

Wang, R. ;

Cao, Q. ;

Liu, C. Y. .

IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2011, 10 (06) :1211-1213

[37] Temperature Evolution of Two-State Lasing in Microdisk Lasers with InAs/InGaAs Quantum Dots [J].

Makhov, Ivan ;

Ivanov, Konstantin ;

Moiseev, Eduard ;

Fominykh, Nikita ;

Dragunova, Anna ;

Kryzhanovskaya, Natalia ;

Zhukov, Alexey .

NANOMATERIALS, 2023, 13 (05)

[38] Features of simultaneous ground- and excited-state lasing in quantum dot lasers [J].

A. E. Zhukov ;

M. V. Maximov ;

Yu. M. Shernyakov ;

D. A. Livshits ;

A. V. Savelyev ;

F. I. Zubov ;

V. V. Klimenko .

Semiconductors, 2012, 46 :231-235

[39] Features of Simultaneous Ground- and Excited-State Lasing in Quantum Dot Lasers [J].

Zhukova, A. E. ;

Maximov, M. V. ;

Shernyakov, Yu. M. ;

Livshits, D. A. ;

Savelyev, A. V. ;

Zubov, F. I. ;

Klimenko, V. V. .

SEMICONDUCTORS, 2012, 46 (02) :231-235

[40] Lasing characteristics of InAs quantum-dot lasers on (001) InP substrate [J].

Qiu, YM ;

Uhl, D ;

Chacon, R ;

Yang, RQ .

APPLIED PHYSICS LETTERS, 2003, 83 (09) :1704-1706

← 1 2 3 4 5 →