Simultaneous two-state lasing in quantum-dot lasers

被引：265
作者：
Markus, A [1 ]
Chen, JX
Paranthoën, C
Fiore, A
Platz, C
Gauthier-Lafaye, O
机构：
[1] Ecole Polytech Fed Lausanne, Inst Quantum Elect & Photon, CH-1015 Lausanne, Switzerland
[2] CNR, Inst Photon & Nanotechnol, I-00156 Rome, Italy
[3] INSA Rennes, Phys Solides Lab, F-35043 Rennes, France
[4] Alcatel CIT, Opto Plus, F-91461 Marcoussis, France
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 12期
关键词：
D O I：
10.1063/1.1563742
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We demonstrate simultaneous lasing at two well-separated wavelengths in self-assembled InAs quantum-dot lasers, via ground-state (GS) and excited-state (ES) transitions. This effect is reproducible and strongly depends on the cavity length. By a master-equation model, we attribute it to incomplete clamping of the ES population at the GS threshold. (C) 2003 American Institute of Physics.
引用
收藏
页码：1818 / 1820
页数：3
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