A Compact Short-Channel Model for Symmetric Double-Gate TMDFET in Subthreshold Region

被引：13

作者：

Gholipour, Morteza ^{[1
]}

机构：

[1] Babol Noshirvani Univ Technol, Dept Elect & Comp Engn, Babol Sar 4714871167, Iran

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2017年 / 64卷 / 08期

关键词：

Short-channel model; subthreshold region; transition metal dichalcogenide (TMD);

D O I：

10.1109/TED.2017.2716951

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a compact analytical I-V model for short-channel double-gate transition metal dichalcogenide filed-effect transistors in the subthreshold region. A closed-form expression is proposed for the characteristic length in the scale length approach, which is based on physical device parameters. It is then used to find the channel potential and drain current in the subthreshold region. Thismodel is verified with the numerical results of a nonequilibrium Green's function (NEGF) simulator. There is good agreement between the results of the proposed model and the numerical NEGF simulations in the subthreshold region, while it captures the effects of the device's physical parameters.

引用

页码：3466 / 3469

页数：4

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